High voltage LDMOS

ABSTRACT

A semiconductor device, such as a LDMOS device, comprising: a semiconductor substrate; a drain region in the semiconductor substrate; a source region in the semiconductor substrate laterally spaced from the drain region; and a drift region in the semiconductor substrate between the drain region and the source region. A gate is operatively coupled to the source region and is located offset from the drain region on a side of the source region opposite from the drain region. When the device is in an on state, current tends to flow deeper into the drift region to the offset gate, rather than near the device surface. The drift region preferably includes at least first and second stacked JFETs. The first and second stacked JFETs include first, second and third layers of a first conductivity type, a fourth layer intermediate the first and second layers including alternating pillars of the first conductivity type and of a second conductivity type extending between the source and drain regions; and a fifth layer intermediate the second and third layers, including alternating pillars of the first and second conductivity types extending between the source and drain regions.

FIELD OF THE INVENTION

This invention relates in general to semiconductor devices and moreparticularly to an improved high voltage Lateral Double-Diffused MetalOxide Semiconductor (LDMOS) device and method of making such a device.

BACKGROUND OF THE INVENTION

In general, high-voltage integrated circuits in which at least onehigh-voltage transistor is arranged on the same chip together with lowvoltage circuits are widely used in a variety of electricalapplications. In these circuits, a LDMOS transistor is an important highvoltage device. FIG. 1 is a diagrammatic view of a typical LDMOS deviceshowing a flux tube and impact ionization zones of the device. As shown,LDMOS device 10 includes a P substrate 12, an nwell layer 14, n+ drain16, p body 18, n+ source 20 diffused in p body 18, P+ tap 19, sourcecontact 22, and drain contact 24. A gate 26 overlies source 20 and pbody 18 and is located between source 20 and drain 16. A flux tube 28extends between drain 16 and source 20 and forms a surface channel undergate 26. Impact ionization zones 30 and 32 are located along tube 28 atdrain 16 and at p body 18 at areas 34 and 36, respectively, of the driftregion. FIG. 2 is a graphical illustration of the surface E-field forthe device of FIG. 1. The surface E-field 38 has peaks 40 and 42 ofdrift region ND and a plateau 44 between peaks 40, 42.

In order improve a high voltage LDMOS device, it is desirable to cut thesurface E-field peaks and to lower the surface E-field. As an example,in order to meet the global requirements of a high voltage device whereVRMS can be 110V to 277V, the Vpeak can be 186V to 470v and a voltagespike can be 336V to 620V, the device desirably should have a breakdownvoltage of 700V.

U.S. Pat. No. 6,097,063, issued Apr. 1, 2000, inventor Fujihira, is ofinterest and discloses a semiconductor device which has a drift regionin which current flows if it is in the on mode and which is depleted ifit is in the off mode. The drift region is formed as a structure havinga plurality of first conductive type drift regions and a plurality of asecond conductive type compartment regions in which each of thecompartment regions is positioned among the adjacent drift regions inparallel to make p-n junctions respectively. The disclosed device isdisadvantageous in the number of process steps required to make thedevice.

There is thus a need for a high voltage LDMOS device which has reducedsurface E-field and E-field peaks, a reduced on resistance, reduceddevice size, and a simplified process for making the device.

SUMMARY OF THE INVENTION

According to the present invention, there is provided a fulfillment ofthe needs and a solution to the problems discussed above.

According to a feature of the present invention, there is provided:

a semiconductor device comprising:

a semiconductor substrate;

a drain region in said semiconductor substrate;

a source region in said semiconductor substrate laterally spaced fromsaid drain region;

a drift region in said semiconductor substrate between said drain regionand said source region; and

a gate operatively coupled to said source region located offset fromsaid drain region on a side of said source region opposite from saiddrain region;

wherein, when said device is in an on state, current tends to flowdeeper into said drift region to said offset gate, rather than near thedevice surface.

According to another feature of the present invention there is provided:

a semiconductor device comprising:

a semiconductor substrate;

a drain region in said semiconductor substrate;

a source region in said semiconductor substrate laterally spaced fromsaid drain region;

a drift region in said semiconductor substrate between said drain regionand said source region;

wherein said drift region includes at least first and second stackedjunction field effect transistors (JFETs).

According to a further feature of the present invention there isprovided

a semiconductor device comprising:

a semiconductor substrate;

a drift region in said semiconductor substrate;

wherein said drift region includes at least first and second stackedjunction field effect transistors (JFETs).

According to a still further feature of the present invention there isprovided:

a method of making a semiconductor device having a drift regioncomprising:

providing a semiconductor substrate of a first conductivity type;

producing a buried well of a second conductivity type in saidsemiconductor substrate;

producing a shallow buried layer of a first conductivity type insidesaid buried well;

producing an epitaxial layer of a second conductivity type on saidburied well;

etching spaced, parallel trenches in said epitaxial layer and buriedwell; wherein the width of said trenches is equal or less than the widthof the width of the regions between said etched trenches;

filling said trenches by segment epitaxial refill with material of saidfirst conductivity type, resulting in alternating pillars of said firstand second conductivity type; and

producing a top layer of a first conductivity type on said epitaxiallayer.

According to another feature of the present invention there is provided

a method of making a semiconductor device having a drift regioncomprising:

providing a semiconductor substrate of a first conductivity type;

producing a buried well of a second conductivity type in saidsemiconductor substrate;

producing a shallow buried layer of a first conductivity type insidesaid buried well.

producing an epitaxial layer of a second conductivity type on saidburied well;

etching spaced, parallel trenches in said epitaxial layer and buriedwell; wherein the width of said trenches is equal or less than the widthof the width of the regions between said etched trenches;

filling said trenches by oxide/Si refill in which a trench side-wallthermal oxide layer has a Si of said first conductivity type refill; and

producing a top layer of a first conductivity type on said epitaxiallayer.

According to another feature of the present invention there is provided:

a method of making a semiconductor device having a drift region,comprising:

providing a semiconductor substrate of a first conductivity type;

producing a buried well of a second conductivity type in saidsemiconductor substrate;

producing a shallow buried layer of a first conductivity type insidesaid buried well;

producing an epitaxial layer of a first conductivity type on said buriedwell;

producing two wells of a second conductivity type in said epitaxiallayer located in source and drain areas;

etching spaced, parallel trenches in said epitaxial layer and buriedwell, wherein the width of said trenches is equal or larger than thewidth of the width of the regions between said etched trenches;

filling said trenches by segment epitaxial refill with material of saidsecond conductivity type, resulting in alternating pillars of said firstand second conductivity type; wherein the alternating pillars of saidfirst and second conductivity type are linked with the two wells of saidsecond conductivity type located in said source and drain areas; and

producing a top layer of a first conductivity type on said epitaxiallayer.

According to another feature of the present invention there is provided:

a method of making a semiconductor device having a drift region,comprising:

providing a semiconductor substrate of a first conductivity type;

producing a buried well of a second conductivity type in saidsemiconductor substrate;

producing a shallow buried layer of a first conductivity type insidesaid buried well;

producing an epitaxial layer of a first conductivity type on said buriedwell;

producing two wells of a second conductivity type in said epitaxiallayer located in source and drain areas;

etching spaced, parallel trenches in said epitaxial layer and buriedwell, wherein the width of said trenches is equal or larger than thewidth of the width of the regions between said etched trenches;

filling said trenches by oxide/Si refill in which a trench sidewallthermal oxide layer has a Si of said second conductivity type refill,and the alternating pillars of said first and second conductivity typesare linked with the two wells of said second conductivity type locatedin said source and drain areas.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagrammatic view showing a known high voltage LDMOS device.

FIG. 2 is a graphical view of the surface E-field of the device of FIG.1.

FIG. 3 is a graphical, diagrammatic view useful in explaining thepresent invention.

FIGS. 4A, 4B, and 4C are diagrammatic views respectively of a known gatestructure, and of two gate structures according to embodiments of thepresent invention.

FIG. 5 is a perspective, diagrammatic view of an embodiment of thepresent invention.

FIG. 6 is a top, sectional, plan, diagrammatic view of a portion of theembodiment of FIG. 5.

FIG. 7 is a front, sectional, elevational, diagrammatic view of aportion of the embodiment of FIG. 5.

FIG. 8 is a side, elevational, sectional, diagrammatic view on a largerscale of the embodiment of FIG. 5.

FIG. 9 is a perspective, diagrammatic view of another embodiment of thepresent invention.

FIGS. 10A-10D are schematic views illustrating a method for forming n/ppillars according to the present invention.

FIGS. 11A and 11B are respective diagrammatic views of other embodimentsof the present invention.

FIG. 12 is a diagrammatic view of another embodiment of the presentinvention.

FIGS. 13A and 13B are respective diagrammatic views of other embodimentsof the present invention.

FIGS. 14A and 14B are respective diagrammatic views of other embodimentsof the present invention.

FIGS. 15A-15E are respective diagrammatic views of other embodiments ofthe present invention.

DESCRIPTION OF THE INVENTION

According to the present invention, an improved high voltage LDMOSdevice is provided in which the surface E-field peaks and the surfaceE-field of the device are reduced. FIG. 3 is a diagrammatic viewillustrating these effects. As shown, FIG. 3 is similar to FIG. 2, butpeaks 40 and 42 have been crossed out at 40′ and 42′, and the E-fieldplateau has been lowered at 44′ or 44″. These E-field effects can beattained by removing the surface channel or by removing the surfacechannel facing to the drain side at peak 40 and by increasing thejunction depletion width to drop the E-field and by making the driftregion easily depleted at the off-state high voltage. As a consequence,the breakdown voltage will also increase.

According to one aspect of the invention, the gate of the high voltageLDMOS device is offset from a location between the source and the drainto a location on the other side of the source away from the drain. Thisaspect is illustrated in FIGS. 4A-4C. As illustrated in FIG. 4A, astandard plane gate 50 is located between source 52 and drain 54. Thesurface channel edge 56 on the drain side is a weak point for the LDMOSdevice due to a surface E-field peak. This is especially true for adevice having a thin gate oxide with n/p pillar super junction locatedin the gate oxide area due to the rough surface topography. FIG. 4Bshows one embodiment of the present invention where the plane gate 60has been offset away from drain 62 to the other side of source 64. Thecomplicated high voltage LDMOS design of FIG. 4A has been changed to arelatively simple HV PIN diode design at area 66. In this embodiment,the channel region current flow has been controlled to make the draincurrent flow deeply into the semiconductor bulk, thus reducing surfaceelectric field. The surface E-field is reduced because there is nosurface channel and surface gate oxide facing the n+ drain 62. A largedevice SOA (Safe Operating Area) is also obtained because the P-body(P-well) 68 facing n+ drain 62 effectively collects hole current whenthe device is in the on state.

FIG. 4C shows another embodiment of the present invention wherein offsettrench gate 70 is located on the side of source 72 away from that facingdrain 74. As with the embodiment of FIG. 4B, the high field region ofthe device of FIG. 4A, has been changed to a p-n junction area 76 andthe drain current flows deeply into the semiconductor bulk. As will bedescribed later, the small width of Pwell 68 of the embodiment of FIG.4B and of Pwell 78 of the embodiment of FIG. 4C can handle a highbreakdown voltage based on a 4-D stacked JFET control drift region 69,79.

Referring now to FIGS. 5-8, there is shown in greater detail anembodiment of the present invention. As shown in FIG. 5, high voltageLDMOS semiconductor device 100 includes a P substrate 102, stacked JFETs(Junction Field Effect Transistors) 104 and 106, n+ drain region 108,n-well 112, p-well 114, n+ source 118, p+ tap 116, offset plane gate120, thin oxide layer 122, drain contact 124, source contact 126, andgate contact 128. FIGS. 6 and 7 show in greater detail portions of thestructure of the stacked JFETs with 4—direction extension (4D) JFETcontrol which results in high breakdown voltage (BV) and low onresistance Rdson for the device. FIG. 7 is a cross-sectional view of aportion of the stacked JFETs which include first, second, and thirdlayers 150, 152, and 154, respectively, of p-type conductivity material.A fourth layer 156 is provided between layers 150 and 152 and includespillars 158 of p-type conductivity material alternating with pillars 160of n-type conductivity material. A fifth layer 162 is provided betweenlayers 152 and 154 that also includes alternating pillars 158 and 160.FIG. 6 is a top, plan sectional view showing a portion of the pillarstructure of FIG. 6. As shown, pillars 158, 160 extend between n+ wellregion 112/n+ drain region 108 and p-body or well 114 with source 116.FIG. 8 shows the JFETs extending between HV NWELLs 171 and 172.

According to another aspect of the invention, an unbalanced dopingconcentration is provided with the p-type pillars having a relativelyhigh doping concentration and the n-type pillars having a relatively lowdoping concentration (but still much greater than normal n-drift doping)in order to increase the n-drift depletion region width based on JFETcontrol. Additionally, the p pillars are made relatively narrower andthe n pillars relatively wider. Thus, the wider n pillars have reducedsensitivity for pillar width variation due to process variation.

Because the n/p pillars are not located at the thin gate oxide region,the gate oxide sensitivity for the top topography of the super junctionareas will be reduced. In addition, with the offset gate structure, then+ source is screened by the p-well resulting in a large device SOAarea.

FIG. 7 illustrates the 4-D depletion extensions by JFET control in boththe lateral and vertical directions at the dashed line region 170. FIG.6 illustrates the depletion region extensions in the lateral directionin more detail at the dashed line regions 180 at the source ends of ppillars 158 and at the dashed line regions 182 at the drain ends of npillars 160. In the off state of the device, a reverse-biased voltageacross the source/drain causes the n-drift and p-drift regions to bedepleted in both the vertical and lateral directions under JFET control;a depletion region pinch-off happens in the drift region, which supportsthe device breakdown, and the large depletion region width t supportshigh drain to source breakdown voltage. In the on-state of the device:the increase in n-drift doping reduces the on-state resistance of thedevice, therefore improving the device current handling capability; theon-state resistance can be adjusted by different kinds of n-drift andp-drift layout configurations; and the on-state resistance can becontinuously reduced by the 4-D stacked drift.

Referring now to FIG. 9, there is shown an offset trench gate embodimentof the present invention. As shown, trench gate LDMOS device 200includes a trench gate 202 which is offset from n+ drain region 204 byits location on the side of n+ source region 206 opposite from drainregion 204. Trench gate 202 can be a polysilicon or other appropriateconductive material. Trench gate device 200 is otherwise similar inconstruction to the embodiment of FIG. 5 and includes stacked JFETs 208and 210 with alternating n/p pillars 212, 214 sandwiched between top player 216, intermediate p layer 218, and substrate p layer 220. N+ drainregion 204 is diffused in n-well 222, and n+ source region 206 isdiffused in p-well 224, which also has p+ tap region 226. A thin oxidelayer 228 separates trench gate 202 from n+ source 206 and buried n-well230.

Referring now to FIGS. 10A-10D, there will be described a method offorming the n/p pillar structure of the JFET region according to anotheraspect of the present invention. In general, the method comprises:providing a bulk p− silicon layer 300, producing a buried nwell layer301, making a p− layer 320 in layer 301 and growing an n− epitaxiallayer (p− epitaxial layer is an option) 302 on layer 301 (FIG. 10A);etching spaced parallel trenches 304 in layer2 301 and 302, the width ofthe trenches 304 being equal or less than the width of the regions 306between trenches 304 (the width of the trenches 304 being equal orlarger than the width of the regions 306 between trenches 304 forp-epitaxial option) (FIG. 10B); filling trenches 304 by segmentepitaxial refill with p material 308 (n material corresponding to p−epitaxial as an option) (FIG. 10C); resulting in alternating n pillars310 and p pillars 312 (FIG. 10D). A top layer 322 of p type is thenproduced. Segment epitaxial refill is carried out by intrinsic epitaxialrefill and in-situ doped epitaxial refill, or different level in-situdoped epitaxial refills. The in-situ doped epitaxial layer with neededdoping concentration is provided for p-n pillars charge balance. Theintrinsic epitaxial layer with un-doped material is provided for processadjustment and also to support some doped layer lateral diffusion forhigher breakdown voltage. Trenches 304 can also be filled with oxide/Sirefill in which a trench side-wall thermal oxide layer has a Si refill.The sidewall oxide is used to prevent lateral diffusion between ppillars and n pillars in the device fabrication. In this case, there isan electric field through the trench side wall oxide by a capacitor (npillars/oxide/p pillars), instead of the diode (n pillars/p pillars), tomake the n pillars depleted in the device off-state for high devicebreakdown voltage. The refill materials could be Si, polysilicon, SiCand also high electron mobility materials, such as SiGe.

Referring now to FIGS. 11A-15E, other embodiments of the presentinvention are shown.

Dual n-type wells are shown in FIG. 11A, one for n-epi (without HVNWELLS400, 402) or p-epi (with HVNWELLS 400, 402) and the other for buriedNwell 404. Step n-type wells are shown in FIG. 11B, one for n-epi(without HVNWELLS 400, 402) or p-epi (with HVNWELLS 400, 402) and theother for buried Nwell 404. The buried Nwell 404 is undercut 406 in thedrift area near the source side. In this way, the n/p pillars near thesource side and n-epi. (or HVNWELL) in source area are easily pitchedoff for high breakdown voltage. However, in the on-state, due to noburied Nwell near the source region, the drift area near the source sidebecomes small, which will induce a slightly higher on-state resistance.

FIG. 12 shows a p-type layer 500 on top of the dual n-type wells and anadjustment p-type layer 502 between the top/buried n-type wells.

FIG. 13A shows a stacked JFET region linked by an optional n-typewell—i.e., HVNWELLS 600 and 602. FIG. 13B shows p-epi regions 610, 612built on top of buried Nwell regions 614 and 616. Because there is nolink-up between n-type drain to n/p pillar area and no link-up betweenn/p pillar area to the channel region, HVNWELL regions are added to thep-epi regions grown on the top of the buried Nwell regions.

FIG. 14A shows a device with shallow trenches (such as 8 um-12 um) inwhich there is no JFET2 and JFET1 700 is built on the top of buriedNwell 702. FIG. 14B shows a device with deep trenches (such as 12 um-20um) in which JFET1 800 is stacked with JFET2 802.

FIGS. 15A-15E show various arrangements without and with various typeadjustment layers. FIG. 15A shows no adjustment layer 900 where JFET1902 and JFET2 904 merge together into a single big JFET. FIG. 15B showsa relatively high p-type adjustment layer 910 with shallow trench optionwhere JFET1 912 is located on the top of buried Nwell 914. FIG. 15Cshows a relatively medium p-type adjustment layer 920 with deep trenchoption where JFET1 922 is stacked with JFET2 924. FIG. 15D shows arelatively low p-type adjustment layer 930 (the p-type dopingconcentration will be compensated by the top of the buried Nwell 932)with shallow trench option. The top of the buried Nwell 932 dopingconcentration is reduced due to the compensation, therefore the npillars on the bottom of JFET1 934 is easily depleted for high breakdownvoltage. FIG. 15E shows a relatively low p type adjustment layer 940(the p-type doping concentration will be compensated by the top of theburied Nwell) with deep trench option. The top of the buried Nwelldoping concentration is reduced due to the compensation, and, therefore,the middle area of the n pillars in the big JFET (JFET1 merge to JFET2)is easily depleted for high breakdown voltage.

The invention has the following advantages, among others.

1. The surface electric field of a high voltage LDMOS device can besignificantly reduced by the offset gate for high device breakdownvoltage. The percentage of channel/source area for high voltage (such as700V) is very small, especially in advanced technology, with minimumeffect for channel/source resistance.

2. A complicated high voltage LDMOS design is changed to a relativelysimple high voltage PIN diode design.

3. Resurf (reduced surface E-field) not only comes from the driftregion, but also comes from the channel region location in the device ofthe invention due to drain current flow deeply into the semiconductorbulk, therefore reducing surface electric field in the LDMOS.

4. The off-set gate with p-body (p-well) facing the drain effectivelycollects hole current at the device on-state for large device safeoperating area (SOA).

5. The off-set gate oxide is not located at the p/n pillar areas,therefore, there is no sensitivity for the top topography of the superjunction areas and the gate oxide can be very thin and compatible withadvanced technology trend.

6. The stacked JFET drift region with 4-depletion (4-D) extensionsresults in high breakdown voltage of the device.

7. There is a high doping concentration in the (p/n pillar) drift regionfor super junction purpose with dual current paths for low onresistance.

8. A trench pillar 4-D stacked JFET drift off-set gate high voltageLDMOS can be easily integrated to an advanced technology platform.

Although the invention has been described in detail with particularreference to certain preferred embodiments thereof, it will beunderstood that variations and modifications can be effected within thespirit and scope of the invention. Thus, the n− drift region of thedevice can have more or less than two stacked JFETs. Although theinvention has been described relating to nmos devices, it is equallyapplicable to pmos devices.

1. A semiconductor device comprising: a semiconductor substrate; a drainregion in said semiconductor substrate; a source region in saidsemiconductor substrate laterally spaced from said drain region; a driftregion in said semiconductor substrate between said drain region andsaid source region; wherein said drift region includes first, second,and third layers laying in parallel planes and of a first conductivitytype, a fourth layer intermediate said first and second layers, saidfourth layer including a first set of alternating pillars laying in aplane substantially orthogonal to said parallel planes, said first setof alternating pillars of said first conductivity type and of a secondconductivity type extending between said source and drain regions; andwherein said drift region includes a fifth layer intermediate saidsecond and third layers, said fifth layer including a second set ofalternating pillars laying in a plane substantially orthogonal to saidparallel planes, said second set of alternating pillars of said firstconductivity type and of said second conductivity type extending betweensaid source and drain regions.
 2. The device of claim 1 wherein saidfirst conductivity type is a p type and said second conductivity type isan n type.
 3. The device of claim 2 wherein said n type pillars arewider than said p type pillars and wherein said p type pillars haverelatively high doping concentration and said n type pillars haverelatively low but higher than normal doping concentration to increasen-drift depletion region width in the device off-state and reducen-drift resistance in the device on-state.
 4. The device of claim 1wherein, when said device is in an off state, there is a four depletionextension between said layers and pillars of said first conductivitytype surrounding a pillar of said second conductivity type.